Infineon Silicon N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 IMW65R039M1HXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.05 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.7V, Series: CoolSiC
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Infineon Silicon N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 IMW65R039M1HXKSA1
Specifications of Infineon Silicon N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 IMW65R039M1HXKSA1 | |
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