Onsemi N-Channel MOSFET, 320 MA, 60 V, 3-Pin SOT-23 2V7002KT1G
About The 3V, Maximum Power Dissipation: 420 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3.onsemi N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 2V7002KT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2
onsemi N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 2V7002KT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 420 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3.04mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 320 MA, 60 V, 3-Pin SOT-23 2V7002KT1G
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi N-Channel MOSFET, 320 MA, 60 V, 3-Pin SOT-23 2V7002KT1G | |
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