Vishay N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 SI3476DV-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 126 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 3.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 3.1mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 SI3476DV-T1-GE3
Specifications of Vishay N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 SI3476DV-T1-GE3 | |
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