Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V
About The Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 515 W, Number of Transistors: 7
Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 515 W, Number of Transistors: 7
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V | |
|---|---|
| Category | |
| Instock | instock |
Last Updated
Rating :- 9.78 /10
Votes :- 51
