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Vishay Dual N/P-Channel-Channel MOSFET, 400 MA, 700 MA, 20 V, 6-Pin SOT-363 SI1553CDL-T1-GE3

About The 48 Ω, 578 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 340 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1mm, Length: 2

Vishay Dual N/P-Channel-Channel MOSFET, 400 mA, 700 mA, 20 V, 6-Pin SOT-363 SI1553CDL-T1-GE3, Channel Type: N, P, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.48 Ω, 578 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 340 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1mm, Length: 2.2mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay Dual N/P-Channel-Channel MOSFET, 400 MA, 700 MA, 20 V, 6-Pin SOT-363 SI1553CDL-T1-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay Dual N/P-Channel-Channel MOSFET, 400 MA, 700 MA, 20 V, 6-Pin SOT-363 SI1553CDL-T1-GE3

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Vishay Dual N/P-Channel-Channel MOSFET, 400 MA, 700 MA, 20 V, 6-Pin SOT-363 SI1553CDL-T1-GE3
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