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Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3

About The 75 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.41mm, Maximum Operating Temperature: +175 °C

Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.75 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.41mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3

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Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3
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