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Infineon N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK IRFR4510TRPBF

About The 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 143 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.

Infineon N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK IRFR4510TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 143 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.73mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK IRFR4510TRPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK IRFR4510TRPBF

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Infineon N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK IRFR4510TRPBF
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