Nexperia N-Channel MOSFET, 90 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN5R8-40YS,115
About The 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 89 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +175 °C.Nexperia N-Channel MOSFET, 90 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN5R8-40YS,115, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7
Nexperia N-Channel MOSFET, 90 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN5R8-40YS,115, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 89 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Nexperia N-Channel MOSFET, 90 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN5R8-40YS,115
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Nexperia N-Channel MOSFET, 90 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN5R8-40YS,115 | |
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