Infineon HEXFET IRFH3707TRPBF N-Kanal Dual, SMD MOSFET Transistor & Diode 30 V / 12 A, 8-Pin PQFN 3 x 3, Drain-Source-Widerstand max.: 0,0124 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 20V
Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET
Infineon HEXFET IRFH3707TRPBF N-Kanal Dual, SMD MOSFET Transistor & Diode 30 V / 12 A, 8-Pin PQFN 3 X 3
Specifications of Infineon HEXFET IRFH3707TRPBF N-Kanal Dual, SMD MOSFET Transistor & Diode 30 V / 12 A, 8-Pin PQFN 3 X 3 | |
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Instock | instock |