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Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1

About The 8V, Series: OptiMOS™-5.0019 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3

Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0019 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: OptiMOS™-5

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1

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Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1
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    • Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1

    Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1

    0019 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.8V, Series: OptiMOS™-5.

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    • Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1

    Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1

    8V, Series: OptiMOS™-5.0019 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.Infineon N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 IAUT260N10S5N019ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.

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