Infineon N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.003 Ω, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS
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Infineon N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1
Specifications of Infineon N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1 | |
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