Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 280 W, Dimensions: 122 x 62 x 17mm, Maximum Operating Temperature: +150 °C, Length: 122mm, Width: 62mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole
Specifications of Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole | |
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