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Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole

About The Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 280 W, Dimensions: 122 x 62 x 17mm, Maximum Operating Temperature: +150 °C, Length: 122mm, Width: 62mm

Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 280 W, Dimensions: 122 x 62 x 17mm, Maximum Operating Temperature: +150 °C, Length: 122mm, Width: 62mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole

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Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole
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