KEMET 3.3nF Multilayer Ceramic Capacitor MLCC, 50V Dc V, ±5%, SMD

3 Arms @ 120 Hz, 4.85 Arms @ 20 kHz, Tolerance: ±20%.Cornell-Dubilier 1800μF Aluminium Capacitor 180V dc - SLP182M180H4P3, Capacitance: 1800µF, Dimensions: 35 x 45mm, Minimum Operating Temperature: -25°C, Diameter: 35mm, Maximum Operating Temperature: +105°C, Lead Pitch: 10mm, Lifetime: 1000 (Shelf) h, 3000 (Endurance) h, Equivalent Series Resistance: 111 mΩ @ 120 Hz, 83 mΩ @ 20 kHz, Ripple Current: 3.

RS PRO Brass Brass Cable Gland, M20 Thread, 8mm Min, 10mm Max.

ROHM 60V 1A, Schottky Rectifier & Schottky Diode, 2-Pin PMDE RBR1VWM60ATR, Mounting Type: Surface Mount, Diode Configuration: Single, Diode Technology: Schottky Barrier.

ROHM 60V 1A, Schottky Rectifier & Schottky Diode, 2-Pin PMDE RBR1VWM60ATR, Mounting Type: Surface Mount, Diode Configuration: Single, Diode Technology: Schottky Barrier.

STMicroelectronics VN5160STR-E MOSFET Gate Driver 8-Pin, SOIC, Mounting Type: Surface Mount, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5 x 4 x 1.65mm.

8mm, Length: 1.

ROHM 40V 2A, Schottky Rectifier & Schottky Diode, 2-Pin PMDE RBR2VWM40ATFTR, Mounting Type: Surface Mount, Diode Configuration: Single, Number of Elements per Chip: 1, Diode Technology: Schottky Barrier.

8 x 0.8mm, Length: 1.

ROHM 40V 2A, Schottky Rectifier & Schottky Diode, 2-Pin PMDE RBR2VWM40ATFTR, Mounting Type: Surface Mount, Diode Configuration: Single, Number of Elements per Chip: 1, Diode Technology: Schottky Barrier.

8 x 0.6 x 0.