Infineon Silicon N-Channel MOSFET, 77.5 A, 650 V, 3-Pin TO-247 IPW60R041P6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.041 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Series: CoolMOS
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Infineon Silicon N-Channel MOSFET, 77.5 A, 650 V, 3-Pin TO-247 IPW60R041P6FKSA1
Specifications of Infineon Silicon N-Channel MOSFET, 77.5 A, 650 V, 3-Pin TO-247 IPW60R041P6FKSA1 | |
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