Infineon N-Channel MOSFET, 19.2 A, 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R210P6AUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.21 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Series: CoolMOS P6
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Infineon N-Channel MOSFET, 19.2 A, 600 V, 5-Pin ThinkPAK 8 X 8 IPL60R210P6AUMA1
Specifications of Infineon N-Channel MOSFET, 19.2 A, 600 V, 5-Pin ThinkPAK 8 X 8 IPL60R210P6AUMA1 | |
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