Vishay P-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK SQD19P06-60L_GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 46 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.38mm, Length: 6.73mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay P-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK SQD19P06-60L_GE3
Specifications of Vishay P-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK SQD19P06-60L_GE3 | |
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