Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.55mJ, Gate Capacitance: 2960pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C
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Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole
Specifications of Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole | |
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Instock | instock |
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