Infineon N-Channel MOSFET, 99 A, 60 V, 3-Pin DPAK IRLR3636TRPBF
Infineon N-Channel MOSFET, 99 A, 60 V, 3-Pin DPAK IRLR3636TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 143 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Length: 6.73mm, Maximum Operating Temperature: +175 °C.