Nexperia N-Channel MOSFET, 59 A, 60 V, 4-Pin LFPAK, SOT-669 PSMN012-60YS,115
Nexperia N-Channel MOSFET, 59 A, 60 V, 4-Pin LFPAK, SOT-669 PSMN012-60YS,115, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 89 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +175 °C.