Nexperia N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BST82,215
Nexperia N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BST82,215, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 830 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3mm, Maximum Operating Temperature: +150 °C.5V, Minimum Gate Threshold Voltage: 1.