onsemi N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN NVMFS6H801NT1G
8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 166 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 5.1mm, Maximum Operating Temperature: +175 °C.onsemi N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN NVMFS6H801NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.