Vishay P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 SI2309CDS-T1-GE3
2 A, 60 V, 3-Pin SOT-23 SI2309CDS-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 345 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3.04mm, Maximum Operating Temperature: +150 °C.Vishay P-Channel MOSFET, 1.