Infineon N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON BSC039N06NSATMA1
9 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 69 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.1mm.Infineon N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON BSC039N06NSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.