onsemi Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N
5V, Maximum Power Dissipation: 960 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Length: 3mm, Maximum Operating Temperature: +150 °C.onsemi Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 106 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.