STMicroelectronics N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK STB13N60M2
STMicroelectronics N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK STB13N60M2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Length: 10.4mm, Maximum Operating Temperature: +150 °C.