Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC019N04NSGATMA1
Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC019N04NSGATMA1, Package Type: PG-TDSON, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.2V.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.