onsemi Dual N/P-Channel-Channel MOSFET, 7.3 A, 8.6 A, 30 V, 8-Pin SOIC FDS8858CZ
3 A, 8.6 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -25 V, -20 V, +20 V, +25 V, Length: 5mm, Maximum Operating Temperature: +150 °C.onsemi Dual N/P-Channel-Channel MOSFET, 7.6 A, 30 V, 8-Pin SOIC FDS8858CZ, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, 21 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.