onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
7mm, Energy Rating: 325mJ, Gate Capacitance: 2590pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C.7 x 5.onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 94 W, Number of Transistors: 1, Transistor Configuration: Single, Dimensions: 15.