Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1
Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 67 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.