IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXFQ60N50P3
IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXFQ60N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.8mm, Maximum Operating Temperature: +150 °C.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 15.