Vishay N-Channel MOSFET, 12 A, 30 V, 6-Pin SOT-363 SIA462DJ-T1-GE3
Vishay N-Channel MOSFET, 12 A, 30 V, 6-Pin SOT-363 SIA462DJ-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 19 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 2.15mm, Maximum Operating Temperature: +150 °C.