Toshiba N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S
Toshiba N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15mm, Length: 10mm.