Infineon Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1
Infineon Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.2V, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Length: 2mm, Maximum Operating Temperature: +150 °C.