Infineon N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK IRLR2908TRPBF
Infineon N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK IRLR2908TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 120 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Length: 6.73mm, Maximum Operating Temperature: +175 °C.