Infineon N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK IRLR2905ZTRPBF
5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Length: 6.73mm, Maximum Operating Temperature: +175 °C.Infineon N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK IRLR2905ZTRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13.