STMicroelectronics MDmesh, SuperMESH STD4NK100Z N-Kanal, SMD MOSFET 1000 V / 2,2 A 90 W, 3-Pin DPAK (TO-252)
: 6,8 Ω, Channel-Modus: Enhancement, Transistor-Konfiguration: Einfach, Gate-Source Spannung max.STMicroelectronics MDmesh, SuperMESH STD4NK100Z N-Kanal, SMD MOSFET 1000 V / 2,2 A 90 W, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: -30 V, +30 V, Länge: 6.6mm, Betriebstemperatur max.