Vishay TrenchFET P-Kanal Dual, SMD MOSFET 20 V / 12,5 A, 8-Pin TSSOP
Vishay TrenchFET P-Kanal Dual, SMD MOSFET 20 V / 12,5 A, 8-Pin TSSOP, Drain-Source-Widerstand max.: 0,0098 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 1V, Transistor-Werkstoff: Si, MPN: Si6423ADQ-T1-GE3.